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   DSB10I45PM preliminary V = VR 45 Symbol Definition Ratings typ. max. IR V IFAV A VF 0.56 RthJC 4.5 K/W min. 10 VRSM V 3.5 T = 25°CVJ T = °CVJ 100 mA 35 V = VR 45 T = 25°CVJ I = AF 10 V T = °CC 115 Ptot 30 W T = 25°CC RthCH K/W max. non-repetitive reverse blocking voltage reverse current, drain current forward voltage drop total power dissipation Conditions Unit 0.78 T = 25°CVJ VF0 V 0.30 T = °CVJ 150 rF 20.8 m? V 0.52 T = °CVJ 125 I = AF 10 V 0.74 I = AF 20 I = AF 20 threshold voltage slope resistance for power loss calculation only mA VRRM V 45 max. repetitive reverse blocking voltage T = 25°CVJ CJ 326 junction capacitance V = VR 5 T = 25°Cf = 1 MHz VJ pF IFSM t = 10 ms; (50 Hz), sine; T = 45°CV = 0 VR VJ max. forward surge current T = °CVJ 150 260 A rectangular 0.5d = average forward current thermal resistance junction to case thermal resistance case to heatsink Schottky 45 0.50 IXYS reserves the right to change limits, conditions and dimensions. 20131030a Data according to IEC 60747and per semiconductor unless otherwise specified ? 2013 IXYS all rights reserved |